Abstract: Borides, represented by boron oxide and boron nitride, have garnered extensive applications and in-depth research across various fields with the continuous advancement of semiconductor technology. The distinctive doping characteristics of boron oxide demonstrate significant potential for optimizing the device performance and enhancing the integration density. Consequently, boron oxide is widely utilized in ultra-shallow silicon doping and is gaining increasing attention within advanced complementary metal oxide semiconductor (CMOS) technologies. Additionally, the importance of boron nitride in the field of semiconductor ferroelectric memory doping is becoming more pronounced. This article aims to review recent developments in the growth of boron oxide and boron nitride films based on atomic layer deposition (ALD) technique, with an emphasis on commonly used boron precursors and co-precursor materials. The performance of related thin-film devices fabricated using these methods is also analyzed and summarized. Based on these advancements, this paper explores future directions for the development of atomic layer deposition techniques for borides and provides valuable insights for research and development in the semiconductor industry.