A MEMS microcantilever actuated by (Pb, La)(Zr, Sn, Ti) O₃ antiferroelectric film

(Pb_0.97 La_0.02)(Zr_0.9 Sn_0.05 Ti_0.05) O₃(PLZST) antiferroelectric film has been deposited on LaNiO₃/Si substrates by a sol-gel method.A microcantilever actuated by PLZST film was fabricated by micro-electro-mechanical system (MEMS) technology.The electrical properties of the PLZST thin-film structure and the frequency response characteristics of the cantilever beam were investigated.The antiferroelectric thin film with typical double hysteresis lines, a maximum polarization intensity of about 90 μC/cm², and the measured fundamental resonance frequency of the microcantilever is about 15.44 kHz with a good vibration pattern were measured.The mechanical quality factor Q value under atmospheric conditions is as high as 787, which meets the sensitivity and response speed requirements for resonators, indicating that this MEMS cantilever beam will have a wide range of applications in the field of miniature resonators and sensors.