| Citation: |
DONG Ce, JIANG Ning, WANG Guanran, WANG Jiawei, REN Jianyang, XIE Siyu, LI Ye, DUAN Yu. Advances in the application of atomic layer deposition in the preparation of optoelectronic devices[J]. Journal of Functional Materials and Devices, 2025, 31(3): 213-230. DOI: 10.20027/j.gncq.2025.0017
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Atomic layer deposition (ALD) is a highly precise thin-film deposition technique that enables the uniform deposition of nanometer-thick films. It is particularly well-suited for fabricating complex microstructures and heterogeneous material interfaces. As optoelectronic devices continue to evolve, ALD technology is finding extensive applications in the fields of optoelectronic materials and dielectric films. Its utility is especially prominent in high-performance solar cells, light-emitting diodes and photoelectric detectors. By precisely controlling the thickness and composition of thin films, ALD technology can markedly enhance the optical and electrical conversion efficiency, as well as the stability of these devices. This article offers a comprehensive review of the advancements in ALD technology for the functional layer of optoelectronic devices. It also discusses the current challenges in research and provides an outlook on the future prospects of ALD technology and its role in optoelectronic devices.
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