Research progress of artificial synaptic devices based on ferroelectric materials

Neuromorphic computing has been intensively studied because it has a potential to solve the bottleneck problem of traditional von Neumann architecture. In artificial synapse device material systems, ferroelectric materials have unique polarization and non-volatile characteristics, which shows a great prospect in the application of neuromorphic computing. This paper summarizes the latest research of ferroelectric synaptic devices, presents the basic properties of ferroelectric material, and analyzes the working principle and research results of two ferroelectric synaptic devices: ferroelectric tunneling junction（FTJ） and ferroelectric field the effect transistor（FeFET）. The current research status and future development of artificial synaptic devices based on ferroelectric materials are summarized and prospected respectively.