Abstract: The effect of edge chamfering on suppressing edge-bead accumulation during photoresist spin coating of square HgCdTe chips was investigated. AZ6130 photoresist was spin-coated to a target thickness of 3 μm, and the film thickness in the central and edge regions was characterized using a profilometer. For unchamfered chips, the average central film thickness ranged from 2.82 to 3.08 μm, with an intra-chip nonuniformity below 5%, whereas the average edge-bead width and height reached 299 μm and 6.63 μm, respectively. With a fixed chamfer width of 500 μm, chamfer angles of 5°, 10°, 20°, and 40° were evaluated. Edge-bead accumulation decreased as the chamfer angle decreased. At 20° and 40°, the edge-bead widths were 121 μm and 250 μm, and the corresponding heights were 2.30 μm and 4.11 μm. No obvious edge-bead accumulation was observed at 5° and 10°. Under the present experimental conditions, an edge chamfer angle of 10° or less effectively suppresses the edge-bead effect on square HgCdTe chips during spin coating.