| Citation: |
JU Shanshan, LI Jinxiong, LU Lei, ZHANG Shengdong, WANG Xinwei. High-stability In2O3/InGaZnO dual-channel thin-film transistors[J]. Journal of Functional Materials and Devices, 2025, 31(3): 231-238. DOI: 10.20027/j.gncq.2025.0024
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This study proposes and fabricates an In2O3/IGZO dual-channel TFT. The results indicate that the bilayer device exhibits excellent electrical characteristics and stability, including a high field-effect mobility of 26.8 cm²·(V·s)−1 and an ultralow subthreshold swing of 90.8 mV·dec−1. The threshold voltage shifts under positive bias stress and negative bias stress are only 29.6 mV and −89.3 mV, respectively. After 50 d of storage in a humid environment, no significant degradation in electrical performance is observed. These outstanding electrical properties and stability are attributed to the high-quality interface formed between the physical-vapor-deposited IGZO layer and the atomic-layer-deposited In2O3 layer. Furthermore, the IGZO layer effectively prevents the interaction between environmental moisture/oxygen and the In2O3 layer. The proposed dual-channel technology offers an effective solution for achieving high-performance oxide thin-film transistors, demonstrating considerable application potential in advanced electronic devices.
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